Read e-book online LNA-ESD co-design for fully integrated CMOS wireless PDF

By Paul Leroux, Michiel Steyaert

ISBN-10: 1402031904

ISBN-13: 9781402031908

ISBN-10: 1402031912

ISBN-13: 9781402031915

LNA-ESD Co-Design for totally built-in CMOS instant Receivers matches within the quest for whole CMOS integration of instant receiver front-ends. With a mixed dialogue of either RF and ESD functionality, it tackles one of many ultimate hindrances at the highway to CMOS integration. The e-book is conceived as a layout advisor for these actively eager about the layout of CMOS instant receivers.

The e-book begins with a entire advent to the functionality specifications of low-noise amplifiers in instant receivers. a number of well known topologies are defined and in comparison with recognize to destiny know-how and frequency scaling. The ESD specifications are brought and concerning the cutting-edge safety units and circuits.

LNA-ESD Co-Design for absolutely built-in CMOS instant Receivers presents an intensive theoretical remedy of the functionality of CMOS low-noise amplifiers within the presence of ESD-protection circuitry. The impact of the ESD-protection parasitics on noise determine, achieve, linearity, and matching are investigated. a number of RF-ESD co-design suggestions are mentioned permitting either excessive RF-performance and solid ESD-immunity for frequencies as much as and past five GHz. distinctive cognizance is usually paid to the format of either lively and passive components.

LNA-ESD Co-Design for totally built-in CMOS instant Receivers deals the reader intuitive perception within the LNA?s habit, in addition to the mandatory mathematical history to optimize its functionality. All fabric is experimentally proven with a number of CMOS implementations, between which an absolutely built-in GPS receiver front-end. The publication is vital studying for RF layout engineers and researchers within the box and can also be appropriate as a textual content publication for a complicated path at the subject.

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Parameter γ is one at zero VDS and — for long devices— decreases to a value of 2/3 in saturation. 8: Classical drain noise current for an NMOS transistor. 9: Schematic of induced gate noise current and the equivalent voltage. devices the effective temperature of the carriers is significantly larger due to the high electric field in the channel. γ values of 2, 3 and more have been reported [Lee98]. Since the electric field for a fixed device is proportional to the VDS it is important to keep this voltage as low as possible.

Fig. 6 also shows the series resistors for the gate, source and drain region. The gate resistor represents the resistance of the poly gate. Taking it into account is important for accurate noise simulations. The same goes for the source resistor which models the resistance of the n+ source region. The drain resistor can also be important for instance in switched power amplifiers where it will increase the on-resistance of the switch. Both at drain and source a capacitor is added to represent their respective junction capacitances.

In this figure, the termination resistor is connected to ground. In reality this would upset the DC biasing of the amplifier. Consequently, resistor Rt should be connected to the DC biasing node. This node can be decoupled from the ground with a large decoupling capacitor Cdc,in . Therefore, Rt is connected to AC ground and the AC performance 1/(Rt Cdc,in ) is given by (ω 1/(Rt Cdc,in )) remains unaltered. 78) Zin = where ωp = M is the Miller factor and RS = 50 Ω, the source resistance. 79) M = 1 + gm1 RL .

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LNA-ESD co-design for fully integrated CMOS wireless receivers by Paul Leroux, Michiel Steyaert


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