By Hans Glawischnig (auth.), Dr. Heiner Ryssel, Dr. Hans Glawischnig (eds.)
Read or Download Ion Implantation Techniques: Lectures given at the Ion Implantation School in Connection with Fourth International Conference on Ion Implantation: Equipment and Techniques Berchtesgaden, Fed. Rep. of Germany, September 13–15, 1982 PDF
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Extra info for Ion Implantation Techniques: Lectures given at the Ion Implantation School in Connection with Fourth International Conference on Ion Implantation: Equipment and Techniques Berchtesgaden, Fed. Rep. of Germany, September 13–15, 1982
The magnetic field is used to control the electron distribution in the arc chamber in a number of ways: i) ii) iii) collimation path lengthening focussing. la is an example of a source geometry where the magnetic field and electron-accelerating electric field are parallel and the electrons enter essentially a field-free arc chamber. The magnetic field prevents an excessive fraction of the electrons being attracted to the sides of the collimating slot and contrains the discharge in the arc chamber to a narrow column.
This source uses a front feed and the vapour is directed onto the front surface of the ioniser (usually iridium or osmium) from a surrounding cylindrical opening [29J. This produces the required ion beam but for materials such as Al, Ga and In the low efficiency of the ionisation process results in a large neutral beam and for many applications a neutral trap may be an essential requirement. The impurity ion content of the beam can be very low and for many applications magnetic analysis may not be necessary.
The plasma is now protected from the electric field caused by the presence of the cathode by the positive space charge on the plasma side of the sheath. ed because the positive ion concentration is higher on the plasma side of the sheath as they have a low energy (velocity) whereas on the cathode side they have been accelerated and therefore have a higher energy and consequently lower concentration. Similarly the electron density is higher on the cathode side of the sheath. 2. The double-layer sheath at the filament/plasma interface The high mobility of the low-mass electrons compared with the high-mass positive ions means that the electron current required to maintain spacecharge neutrality is much higher.
Ion Implantation Techniques: Lectures given at the Ion Implantation School in Connection with Fourth International Conference on Ion Implantation: Equipment and Techniques Berchtesgaden, Fed. Rep. of Germany, September 13–15, 1982 by Hans Glawischnig (auth.), Dr. Heiner Ryssel, Dr. Hans Glawischnig (eds.)