Read e-book online Impurities and Defects in Group IV Elements, IV-IV and III-V PDF

By (auth.), O. Madelung, U. Rössler, M. Schulz (eds.)

ISBN-10: 3540313583

ISBN-13: 9783540313588

ISBN-10: 3540430865

ISBN-13: 9783540430865

Vols. III/17a-i and III/22a,b(supplement) on semiconductor physics and expertise were released prior, the latter protecting new information at the technologically vital crew IV components, IV-IV and III-V compounds simply. The wealth of additional info from the decade is now being seriously evaluated via over 30 recognized specialists within the box of semiconductors. to fulfill the calls for of today´s scientists and to supply an entire evaluate on semiconductor information, quantity III/41 presents all facts on hand up to now. they are going to be released within the following means: a sequence of 8 subvolumes disguise in simple terms the supplementary info to vols.III/17 and 22. Enclosed to every subvolume, a CD-ROM incorporates a whole, revised and replace version of all proper info. for every person substance the knowledge is gifted in userfriendly files, containing numerical info, figures and references. easy accessibility to the files is supplied through substance and estate key terms, directory and whole textual content retrieval.

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Extra info for Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds.

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6. Degree of ionization I = (NA− – Ncomp)/(NA – Ncomp) as a function of the temperature for Al and B acceptors in SiC. (a) Ncomp = 1015 cm–3, (b) Ncomp = 10% of NA. The ionization energies are taken as ∆E(Al) = 200 meV and ∆E(B) = 300 meV; the solid vertical straight line denotes room temperature (RT) values [97T]. 1 8 6 SiC :Al, B 16 10 cm –3 17 10 cm 4 –3 18 Degree of ionization I 10 cm 2 19 10 cm 8 6 aluminum boron acceptor concentration NA : 16 –3 19 –3 10 cm – 10 cm 15 –3 compensation 10 cm 4 2 –2 10 RT 0 50 100 150 a 1 200 250 300 Temperature T [°C] 350 400 450 500 8 17 10 cm 6 4 Degree of ionization I –3 –1 10 –3 18 10 cm –3 2 19 10 cm –1 10 –3 8 6 aluminum boron acceptor concentration NA : 17 –3 19 –3 10 cm – 10 cm compensation 10 % of NA 4 2 –2 10 b –3 RT 0 50 100 150 200 250 300 Temperature T [°C] 350 400 450 500 Fig.

7 (1992) 2465. : Mater. Sci. Eng. B 11 (1992) 27. : Mater. Sci. Forum 83-87 (1992) 1183. : J. Appl. Phys. 72 (1992) 3708. Y. M. L. ), Springer Proc. Phys. Vol. 71, Berlin: Springer-Verlag, 1992, p. 210. : J. Appl. Phys. 73 (1993) 3332. : Defect Diffusion Forum 103-105 (1993) 633. : Physica B185 (1993) 264. : Appl. Phys. Lett. 65 (1994) 1811. : J. Appl. Phys. 75 (1994) 3472. : Inst. Phys. Conf. Series No. 137 (1994) 181. : Appl. Phys. Lett. 64 (1994) 2730. : J. Appl. Phys. 76 (1994) 1956. : Inst.

Eng. B 61-62 (1999) 454. : Mater. Sci. Forum 338-342 (2000) 753. Fig. 1. 6µm, mean Al concentration N(Al) = 2x1018cm–3) annealed at different temperatures [97T]. 19 2 4H-SiC :N 18 –3 Free hole concentration p [cm ] 10 10 Al_1 Al_2 Al_3 Al_4 8 1550 °C 1600 °C 1700 °C 1800 °C 6 Hole hall mobility µH,p [cm2(Vs)–1] 10 17 10 16 10 15 10 14 10 sample Ta 13 1 2 5 6 3 4 5 –1 –3 –1 Inv. temperature T [10 K ] b 4 Resistivity ρ [Ω cm] 10 3 10 2 10 10 1 sample Ta –1 c 10 8 1 2 6 3 4 5 –1 –3 –1 Inv. temperature T [10 K ] 4 7 10 10 2 6 10 a 4 7 10 sample Ta 2 2 4 Temperature T [K] 6 2 8⋅10 Fig.

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Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds. by (auth.), O. Madelung, U. Rössler, M. Schulz (eds.)


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